Amorphous Phosphorus
نویسندگان
چکیده
منابع مشابه
Photoluminescence and Esr Studies of Localized States in Amorphous Phosphorus
Photoluminescence and electron spin resonance measurements have been performed in bulk a-red P. We observe a photoluminescence band at 1.40 eV which exhibits a sensitivity to the excitation energy employed. Specifically, the peak of this band progresses to lower energies for higher energy excitation. Electron spin resonance measurements indicate -lo1? spins/cm3 for "cold dark" and optically ind...
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Recently, two-dimensional materials have been extensively studied. Due to the reduced dielectric screening and confinement of electrons in two dimensions, these materials show dramatically different electronic and optical properties from their bulk counterparts. So far, studies on twodimensional materials have mainly focused on crystalline materials. Here we report studies of atomically thin am...
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A. Pandey, B. Cai, N. Podraza, and D. A. Drabold Department of Physics and Astronomy, Condensed Matter and Surface Science Program, Ohio University, Athens, Ohio 45701, USA Department of Radiation Oncology, Washington University School of Medicine, St. Louis, Missouri 63108, USA Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606, USA Department of Physics and Astronom...
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-Optical absorpt ion measurements a re repor ted f o r rf sput tered a-P f i l m s prepared under cond i t i ons o f v a r i a b l e subst rate temperature. Var ia t ions i n t h e o p t i c a l gap w i t h Ts are s i m i l a r t o changes i n t h e Raman s c a t t e r i n g and x-ray d i f f r a c t i o n spectra. The r e s u l t s suggest t h a t i n t e r mediate-range order p lays an import...
متن کاملInfrared Charge-Modulation Spectroscopy of Defects in Phosphorus Doped Amorphous Silicon
We present infrared charge-modulation absorption spectra on phosphorus-doped amorphous silicon (a-Si:H:P) with doping levels between 0.17% 5%. At higher doping levels (1% 5%) we find a sharp spectral line near 0.75 eV with a width of 0.1 eV. We attribute this line to the internal optical transitions of a complex incorporating four fold coordinated phosphorus and a dangling bond. This line is ba...
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ژورنال
عنوان ژورنال: Scientific American
سال: 1854
ISSN: 0036-8733
DOI: 10.1038/scientificamerican04221854-254c